SSM6N55NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 30V 4A UDFN6
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 2235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 0.77 EUR |
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Technische Details SSM6N55NU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A UDFN6, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.
Weitere Produktangebote SSM6N55NU,LF nach Preis ab 0.52 EUR bis 1.25 EUR
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SSM6N55NU,LF | Hersteller : Toshiba |
MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD |
auf Bestellung 40 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM6N55NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A UDFN6 Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
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