SSM6N56FE,LM

SSM6N56FE,LM Toshiba Semiconductor and Storage


SSM6N56FE_datasheet_en_20140410.pdf?did=15150&prodName=SSM6N56FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 84000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.14 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N56FE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N56FE,LM nach Preis ab 0.17 EUR bis 1.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N56FE_datasheet_en_20140410.pdf?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 86257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
34+ 0.66 EUR
100+ 0.34 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba SSM6N56FE_datasheet_en_20140410-1916272.pdf MOSFET Small-signal MOSFET N-Channel
auf Bestellung 207555 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.33 EUR
53+ 0.98 EUR
100+ 0.56 EUR
500+ 0.37 EUR
Mindestbestellmenge: 40
SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba 46dst_ssm6n56fe-tde_en_31714.pdf Trans MOSFET N-CH Si 20V 0.8A 6-Pin ES T/R
Produkt ist nicht verfügbar