SSM6N56FE,LM

SSM6N56FE,LM Toshiba Semiconductor and Storage


docget.jsp?did=15150&prodName=SSM6N56FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
8000+0.09 EUR
12000+0.09 EUR
20000+0.09 EUR
28000+0.09 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6N56FE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active.

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SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
52+0.34 EUR
144+0.12 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba SSM6N56FE_datasheet_en_20140410-1916272.pdf MOSFET Small-signal MOSFET N-Channel
auf Bestellung 207555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.90 EUR
10+0.67 EUR
100+0.38 EUR
500+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N56FE,LM SSM6N56FE,LM Hersteller : Toshiba 46dst_ssm6n56fe-tde_en_31714.pdf Trans MOSFET N-CH Si 20V 0.8A 6-Pin ES T/R
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