SSM6N56FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.11 EUR |
| 8000+ | 0.09 EUR |
| 12000+ | 0.09 EUR |
| 20000+ | 0.09 EUR |
| 28000+ | 0.09 EUR |
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Technische Details SSM6N56FE,LM Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active.
Weitere Produktangebote SSM6N56FE,LM nach Preis ab 0.12 EUR bis 0.90 EUR
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SSM6N56FE,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 32255 Stücke: Lieferzeit 10-14 Tag (e) |
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