SSM6N57NU,LF

SSM6N57NU,LF Toshiba Semiconductor and Storage


docget.jsp?did=13889&prodName=SSM6N57NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 48000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.19 EUR
9000+0.17 EUR
30000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6N57NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.

Weitere Produktangebote SSM6N57NU,LF nach Preis ab 0.18 EUR bis 0.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM6N57NU,LF SSM6N57NU,LF Hersteller : Toshiba SSM6N57NU_datasheet_en_20210917-1916171.pdf MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS
auf Bestellung 35740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
10+0.58 EUR
100+0.34 EUR
500+0.29 EUR
1000+0.21 EUR
3000+0.20 EUR
9000+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N57NU,LF SSM6N57NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13889&prodName=SSM6N57NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 48814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.59 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH