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SSM6N57NU,LF

SSM6N57NU,LF Toshiba Semiconductor and Storage

SSM6N57NU_datasheet_en_20210917.pdf?did=13889&prodName=SSM6N57NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N57NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.

Weitere Produktangebote SSM6N57NU,LF nach Preis ab 0.28 EUR bis 1.15 EUR

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SSM6N57NU,LF SSM6N57NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N57NU_datasheet_en_20210917.pdf?did=13889&prodName=SSM6N57NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 8917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
30+ 0.74 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
SSM6N57NU,LF SSM6N57NU,LF Hersteller : Toshiba SSM6N57NU_datasheet_en_20210917-1916171.pdf MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS
auf Bestellung 48163 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.15 EUR
58+ 0.91 EUR
100+ 0.61 EUR
500+ 0.46 EUR
1000+ 0.34 EUR
3000+ 0.33 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 46