SSM6N58NU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
| 21000+ | 0.17 EUR |
| 30000+ | 0.16 EUR |
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Technische Details SSM6N58NU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V, Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFN (2x2), Part Status: Active.
Weitere Produktangebote SSM6N58NU,LF nach Preis ab 0.17 EUR bis 0.76 EUR
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SSM6N58NU,LF | Hersteller : Toshiba |
MOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1 |
auf Bestellung 28148 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N58NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFN (2x2) Part Status: Active |
auf Bestellung 142358 Stücke: Lieferzeit 10-14 Tag (e) |
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