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SSM6N67NU,LF

SSM6N67NU,LF Toshiba Semiconductor and Storage

SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU Hersteller: Toshiba Semiconductor and Storage
Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N67NU,LF Toshiba Semiconductor and Storage

Description: SMALL LOW RON DUAL NCH MOSFETS I, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.

Weitere Produktangebote SSM6N67NU,LF nach Preis ab 0.26 EUR bis 1.3 EUR

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Preis ohne MwSt
SSM6N67NU,LF SSM6N67NU,LF Hersteller : Toshiba SSM6N67NU_datasheet_en_20171218-1358572.pdf MOSFET LowON Res MOSFET ID=4A VDSS=30V
auf Bestellung 126495 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.14 EUR
59+ 0.89 EUR
105+ 0.5 EUR
1000+ 0.34 EUR
3000+ 0.29 EUR
9000+ 0.27 EUR
24000+ 0.26 EUR
Mindestbestellmenge: 46
SSM6N67NU,LF SSM6N67NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6N67NU_datasheet_en_20171218.pdf?did=60461&prodName=SSM6N67NU Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 9820 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
25+ 1.05 EUR
100+ 0.71 EUR
500+ 0.54 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 20