auf Bestellung 64315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
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Technische Details SSM6N67NU,LF Toshiba
Description: MOSFET 2N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.
Weitere Produktangebote SSM6N67NU,LF nach Preis ab 0.25 EUR bis 0.93 EUR
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SSM6N67NU,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 30V 4A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
auf Bestellung 2390 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N67NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
Produkt ist nicht verfügbar |