auf Bestellung 23613 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
48+ | 1.09 EUR |
63+ | 0.83 EUR |
112+ | 0.47 EUR |
1000+ | 0.32 EUR |
3000+ | 0.3 EUR |
9000+ | 0.26 EUR |
24000+ | 0.24 EUR |
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Technische Details SSM6N68NU,LF Toshiba
Description: SMALL LOW RON DUAL NCH MOSFETS H, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V, Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.
Weitere Produktangebote SSM6N68NU,LF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SSM6N68NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMALL LOW RON DUAL NCH MOSFETS H Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N68NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMALL LOW RON DUAL NCH MOSFETS H Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
Produkt ist nicht verfügbar |