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SSM6N7002BFE,LM

SSM6N7002BFE,LM Toshiba Semiconductor and Storage

SSM6N7002BFE_datasheet_en_20140301.pdf?did=2282&prodName=SSM6N7002BFE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.087 EUR
12000+ 0.084 EUR
Mindestbestellmenge: 4000
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Technische Details SSM6N7002BFE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 60V 0.2A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V, Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.1V @ 250µA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N7002BFE,LM nach Preis ab 0.091 EUR bis 0.77 EUR

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SSM6N7002BFE,LM SSM6N7002BFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N7002BFE_datasheet_en_20140301.pdf?did=2282&prodName=SSM6N7002BFE Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 22146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.44 EUR
102+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 34
SSM6N7002BFE,LM SSM6N7002BFE,LM Hersteller : Toshiba SSM6N7002BFE_datasheet_en_20140301-1132830.pdf MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
auf Bestellung 127890 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
68+0.77 EUR
99+ 0.53 EUR
241+ 0.22 EUR
1000+ 0.13 EUR
8000+ 0.099 EUR
24000+ 0.091 EUR
Mindestbestellmenge: 68
SSM6N7002BFE,LM SSM6N7002BFE,LM Hersteller : Toshiba 205docget.jsptypedatasheetlangenpidssm6n7002bfe.jsptypedatasheetlang.pdf Trans MOSFET N-CH Si 60V 0.2A 6-Pin ES T/R
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
SSM6N7002BFE,LM Hersteller : Toshiba 205docget.jsptypedatasheetlangenpidssm6n7002bfe.jsptypedatasheetlang.pdf Trans MOSFET N-CH Si 60V 0.2A 6-Pin ES T/R
Produkt ist nicht verfügbar
SSM6N7002BFE,LM SSM6N7002BFE,LM Hersteller : Toshiba 205docget.jsptypedatasheetlangenpidssm6n7002bfe.jsptypedatasheetlang.pdf Trans MOSFET N-CH Si 60V 0.2A 6-Pin ES T/R
Produkt ist nicht verfügbar