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SSM6N7002BFE,LM

SSM6N7002BFE,LM Toshiba Semiconductor and Storage

docget.jsp?did=2282&prodName=SSM6N7002BFE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.087 EUR
8000+0.079 EUR
12000+0.074 EUR
20000+0.069 EUR
28000+0.065 EUR
Mindestbestellmenge: 4000 Stücke
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Technische Details SSM6N7002BFE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 60V 0.2A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V, Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.1V @ 250µA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N7002BFE,LM nach Preis ab 0.08 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba D54EA774E98521630ADA5D3589EDEFD5DCAC604E46E4561AA66EFFD64D5ADD85.pdf MOSFETs ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.46 EUR
12+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
4000+0.08 EUR
Mindestbestellmenge: 8 Stücke
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SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage docget.jsp?did=2282&prodName=SSM6N7002BFE Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 33292 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
76+0.27 EUR
121+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N7002BFE,LM D54EA774E98521630ADA5D3589EDEFD5DCAC604E46E4561AA66EFFD64D5ADD85.pdf
SSM6N7002BFE,LM
Hersteller: Toshiba
MOSFETs ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+0.46 EUR
12+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
4000+0.08 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N7002BFE,LM docget.jsp?did=2282&prodName=SSM6N7002BFE
SSM6N7002BFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 33292 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
76+0.27 EUR
121+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH