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SSM6N7002CFU,LF(T

SSM6N7002CFU,LF(T Toshiba


1685docget.jspdid29875prodnamessm6n7002cfu.jspdid29875prodnamessm6n70.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 0.17A 6-Pin US T/R
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Technische Details SSM6N7002CFU,LF(T Toshiba

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.17A, Power dissipation: 285mW, Case: SC88, Gate-source voltage: ±20V, On-state resistance: 4.7Ω, Mounting: SMD, Gate charge: 0.27nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.

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SSM6N7002CFU,LF(T SSM6N7002CFU,LF(T Hersteller : TOSHIBA SSM6N7002CFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SSM6N7002CFU,LF(T SSM6N7002CFU,LF(T Hersteller : TOSHIBA SSM6N7002CFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar