SSM6N7002KFU,LF(T TOSHIBA
Hersteller: TOSHIBACategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 760+ | 0.094 EUR |
| 1025+ | 0.07 EUR |
| 1160+ | 0.062 EUR |
| 1300+ | 0.055 EUR |
| 1375+ | 0.052 EUR |
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Technische Details SSM6N7002KFU,LF(T TOSHIBA
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.3A, Power dissipation: 285mW, Case: SC88, Gate-source voltage: ±20V, On-state resistance: 1.75Ω, Mounting: SMD, Gate charge: 0.39nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM6N7002KFU,LF(T nach Preis ab 0.052 EUR bis 0.094 EUR
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SSM6N7002KFU,LF(T | Hersteller : TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4520 Stücke: Lieferzeit 7-14 Tag (e) |
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SSM6N7002KFU,LF(T | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.3A Automotive 6-Pin US T/R |
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