auf Bestellung 312066 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.58 EUR |
| 153+ | 0.34 EUR |
| 328+ | 0.16 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.088 EUR |
| 9000+ | 0.075 EUR |
| 45000+ | 0.068 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6N7002KFU,LF Toshiba
Description: MOSFET 2N-CH 60V 0.3A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6N7002KFU,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SSM6N7002KFU,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 60V 0.3A US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) |
|
 |
SSM6N7002KFU,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.3A Automotive 6-Pin US T/R |
Produkt ist nicht verfügbar |
|
|
|
SSM6N7002KFU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
Produkt ist nicht verfügbar |