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SSM6N7002KFU,LF

SSM6N7002KFU,LF Toshiba Semiconductor and Storage

docget.jsp?did=30374&prodName=SSM6N7002KFU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6N7002KFU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 60V 0.3A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote SSM6N7002KFU,LF nach Preis ab 0.05 EUR bis 0.32 EUR

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SSM6N7002KFU,LF SSM6N7002KFU,LF Hersteller : Toshiba SSM6N7002KFU_datasheet_en_20240926-1916430.pdf MOSFETs Small-signal MOSFET 2in1 ESD Protected
auf Bestellung 75528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.32 EUR
19+0.15 EUR
100+0.08 EUR
1000+0.07 EUR
3000+0.06 EUR
9000+0.05 EUR
24000+0.05 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N7002KFU,LF SSM6N7002KFU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=30374&prodName=SSM6N7002KFU Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 13755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.20 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N7002KFU,LF SSM6N7002KFU,LF Hersteller : Toshiba ssm6n7002kfu_datasheet_en_20210528.pdf Trans MOSFET N-CH Si 60V 0.3A Automotive 6-Pin US T/R
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