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SSM6N813R,LF

SSM6N813R,LF Toshiba Semiconductor and Storage

SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N813R,LF Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET DUAL N-CH VD, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active.

Weitere Produktangebote SSM6N813R,LF nach Preis ab 0.56 EUR bis 1.43 EUR

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SSM6N813R,LF SSM6N813R,LF Hersteller : Toshiba Semiconductor and Storage SSM6N813R_datasheet_en_20210603.pdf?did=60723&prodName=SSM6N813R Description: SMALL SIGNAL MOSFET DUAL N-CH VD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 8270 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.23 EUR
100+ 0.92 EUR
500+ 0.72 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 19
SSM6N813R,LF Hersteller : Toshiba SSM6N813R_datasheet_en_20210603-2307031.pdf MOSFET Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(a.4.5V)=0.154Ohm, ID=3.5A
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