SSM6N813R,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
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Technische Details SSM6N813R,LXHF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SSM6N813R,LXHF nach Preis ab 0.43 EUR bis 1.78 EUR
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SSM6N813R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N813R,LXHF | Hersteller : Toshiba |
MOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F |
auf Bestellung 4562 Stücke: Lieferzeit 10-14 Tag (e) |
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