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SSM6N815R,LF

SSM6N815R,LF Toshiba Semiconductor and Storage

SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6N815R,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 100V 2A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V, Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active.

Weitere Produktangebote SSM6N815R,LF nach Preis ab 0.22 EUR bis 1.14 EUR

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SSM6N815R,LF SSM6N815R,LF Hersteller : Toshiba SSM6N815R_datasheet_en_20170829-1289328.pdf MOSFETs LowON Res MOSFET ID=2A VDSS=100V
auf Bestellung 73146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.57 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.28 EUR
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 4
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SSM6N815R,LF SSM6N815R,LF Hersteller : Toshiba Semiconductor and Storage SSM6N815R_datasheet_en_20170829.pdf?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 23103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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SSM6N815R,LF
Produktcode: 149006
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