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SSM6N815R,LF

docget.jsp?did=58964&prodName=SSM6N815R
Produktcode: 149006
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Weitere Produktangebote SSM6N815R,LF nach Preis ab 0.21 EUR bis 1.26 EUR

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SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
21000+0.23 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N815R,LF SSM6N815R,LF Toshiba 59523A98D1D53BCBEE5DE86D18BB9BB671C1738D16CB08A2C39584896B41B967.pdf MOSFETs LowON Res MOSFET ID=2A VDSS=100V
auf Bestellung 56990 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.26 EUR
10+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
3000+0.27 EUR
6000+0.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 39337 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
27+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
21000+0.23 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N815R,LF 59523A98D1D53BCBEE5DE86D18BB9BB671C1738D16CB08A2C39584896B41B967.pdf
SSM6N815R,LF
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=2A VDSS=100V
auf Bestellung 56990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.26 EUR
10+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
3000+0.27 EUR
6000+0.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
auf Bestellung 39337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
27+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH