SSM6P36FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 3925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.63 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.16 EUR |
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Technische Details SSM6P36FE,LM Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.33A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 330mA, Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V, Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6P36FE,LM nach Preis ab 0.15 EUR bis 1.04 EUR
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SSM6P36FE,LM | Hersteller : Toshiba |
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auf Bestellung 7069 Stücke: Lieferzeit 14-28 Tag (e) |
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| SSM6P36FE,LM | Hersteller : Toshiba |
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SSM6P36FE,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.33A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
Produkt ist nicht verfügbar |