SSM6P39TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
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Technische Details SSM6P39TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V, Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V, Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6.
Weitere Produktangebote SSM6P39TU,LF nach Preis ab 0.2 EUR bis 1.18 EUR
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SSM6P39TU,LF | Toshiba |
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+/-8V, ID=-1.5A, RDS(ON)=0.213Ohm at 4V, in UF6 package |
auf Bestellung 5711 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 1.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
auf Bestellung 8608 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+/-8V, ID=-1.5A, RDS(ON)=0.213Ohm at 4V, in UF6 package
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+/-8V, ID=-1.5A, RDS(ON)=0.213Ohm at 4V, in UF6 package
auf Bestellung 5711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.06 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| SSM6P39TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 8608 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |