SSM6P40TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SSM6P40TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 2V @ 1mA, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6P40TU,LF nach Preis ab 0.19 EUR bis 1.18 EUR
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SSM6P40TU,LF | Toshiba |
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-30V, VGSS=+/-20V, ID=-1.4A, RDS(ON)=0.403Ohm at 4V |
auf Bestellung 57311 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P40TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 1.4A UF6 Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 2V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 4072 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-30V, VGSS=+/-20V, ID=-1.4A, RDS(ON)=0.403Ohm at 4V
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-30V, VGSS=+/-20V, ID=-1.4A, RDS(ON)=0.403Ohm at 4V
auf Bestellung 57311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| SSM6P40TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |