SSM6P40TU,LF

SSM6P40TU,LF Toshiba Semiconductor and Storage


SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6P40TU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 30V 1.4A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V, Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: UF6.

Weitere Produktangebote SSM6P40TU,LF nach Preis ab 0.27 EUR bis 1.11 EUR

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Preis ohne MwSt
SSM6P40TU,LF SSM6P40TU,LF Hersteller : Toshiba Semiconductor and Storage SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 11644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.73 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
SSM6P40TU,LF SSM6P40TU,LF Hersteller : Toshiba SSM6P40TU_datasheet_en_20140301-1627366.pdf MOSFET Small Signal MOSFET P-ch x 2 VDSS=-30V, VGSS=+/-20V, ID=-1.4A, RDS(ON)=0.403Ohm a. 4V
auf Bestellung 93000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
60+ 0.87 EUR
108+ 0.48 EUR
1000+ 0.33 EUR
3000+ 0.29 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 47
SSM6P40TU,LF SSM6P40TU,LF Hersteller : Toshiba 602docget.jsppidssm6p40tulangentypedatasheet.jsppidssm6p40tulangenty.pdf Trans MOSFET P-CH Si 30V 1.4A 6-Pin UF T/R
Produkt ist nicht verfügbar
SSM6P40TU,LF SSM6P40TU,LF Hersteller : Toshiba 602docget.jsppidssm6p40tulangentypedatasheet.jsppidssm6p40tulangenty.pdf Trans MOSFET P-CH Si 30V 1.4A 6-Pin UF T/R
Produkt ist nicht verfügbar