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SSM6P49NU,LF

SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
Produktcode: 177120
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    SSM6P49NU,LF SSM6P49NU,LF Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
    Drain to Source Voltage (Vdss): 20V
    Power - Max: 1W
    Technology: MOSFET (Metal Oxide)
    Operating Temperature: 150°C (TJ)
    Configuration: 2 P-Channel (Dual)
    Mounting Type: Surface Mount
    Package / Case: 6-WDFN Exposed Pad
    Packaging: Tape & Reel (TR)
    Supplier Device Package: 6-UDFN (2x2)
    Vgs(th) (Max) @ Id: 1.2V @ 1mA
    FET Feature: Logic Level Gate
    Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
    Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
    Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
    Current - Continuous Drain (Id) @ 25°C: 4A
    auf Bestellung 6000 Stücke:
    Lieferzeit 10-14 Tag (e)
    3000+0.31 EUR
    6000+0.29 EUR
    Mindestbestellmenge: 3000 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH
    SSM6P49NU,LF SSM6P49NU,LF Toshiba 3441304534423243383243433332313931433035413330453731443835433843.pdf MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
    auf Bestellung 2263 Stücke:
    Lieferzeit 10-14 Tag (e)
    3+1.33 EUR
    10+0.82 EUR
    100+0.52 EUR
    500+0.4 EUR
    1000+0.36 EUR
    3000+0.31 EUR
    6000+0.27 EUR
    Mindestbestellmenge: 3 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH
    SSM6P49NU,LF SSM6P49NU,LF Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
    Supplier Device Package: 6-UDFN (2x2)
    Vgs(th) (Max) @ Id: 1.2V @ 1mA
    FET Feature: Logic Level Gate
    Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
    Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
    Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
    Current - Continuous Drain (Id) @ 25°C: 4A
    Drain to Source Voltage (Vdss): 20V
    Power - Max: 1W
    Technology: MOSFET (Metal Oxide)
    Operating Temperature: 150°C (TJ)
    Configuration: 2 P-Channel (Dual)
    Mounting Type: Surface Mount
    Package / Case: 6-WDFN Exposed Pad
    Packaging: Cut Tape (CT)
    auf Bestellung 10462 Stücke:
    Lieferzeit 10-14 Tag (e)
    16+1.34 EUR
    26+0.83 EUR
    100+0.54 EUR
    500+0.4 EUR
    1000+0.36 EUR
    Mindestbestellmenge: 16 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH
    SSM6P49NU,LF SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
    SSM6P49NU,LF
    Hersteller: Toshiba Semiconductor and Storage
    Description: MOSFET 2P-CH 20V 4A 6UDFN
    Drain to Source Voltage (Vdss): 20V
    Power - Max: 1W
    Technology: MOSFET (Metal Oxide)
    Operating Temperature: 150°C (TJ)
    Configuration: 2 P-Channel (Dual)
    Mounting Type: Surface Mount
    Package / Case: 6-WDFN Exposed Pad
    Packaging: Tape & Reel (TR)
    Supplier Device Package: 6-UDFN (2x2)
    Vgs(th) (Max) @ Id: 1.2V @ 1mA
    FET Feature: Logic Level Gate
    Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
    Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
    Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
    Current - Continuous Drain (Id) @ 25°C: 4A
    auf Bestellung 6000 Stücke:
    Lieferzeit 10-14 Tag (e)
    AnzahlPrivatkunde
    3000+0.31 EUR
    6000+0.29 EUR
    Mindestbestellmenge: 3000 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH
    SSM6P49NU,LF 3441304534423243383243433332313931433035413330453731443835433843.pdf
    SSM6P49NU,LF
    Hersteller: Toshiba
    MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
    auf Bestellung 2263 Stücke:
    Lieferzeit 10-14 Tag (e)
    AnzahlPrivatkunde
    3+1.33 EUR
    10+0.82 EUR
    100+0.52 EUR
    500+0.4 EUR
    1000+0.36 EUR
    3000+0.31 EUR
    6000+0.27 EUR
    Mindestbestellmenge: 3 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH
    SSM6P49NU,LF SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU
    SSM6P49NU,LF
    Hersteller: Toshiba Semiconductor and Storage
    Description: MOSFET 2P-CH 20V 4A 6UDFN
    Supplier Device Package: 6-UDFN (2x2)
    Vgs(th) (Max) @ Id: 1.2V @ 1mA
    FET Feature: Logic Level Gate
    Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
    Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
    Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
    Current - Continuous Drain (Id) @ 25°C: 4A
    Drain to Source Voltage (Vdss): 20V
    Power - Max: 1W
    Technology: MOSFET (Metal Oxide)
    Operating Temperature: 150°C (TJ)
    Configuration: 2 P-Channel (Dual)
    Mounting Type: Surface Mount
    Package / Case: 6-WDFN Exposed Pad
    Packaging: Cut Tape (CT)
    auf Bestellung 10462 Stücke:
    Lieferzeit 10-14 Tag (e)
    AnzahlPrivatkunde
    16+1.34 EUR
    26+0.83 EUR
    100+0.54 EUR
    500+0.4 EUR
    1000+0.36 EUR
    Mindestbestellmenge: 16 Stücke
    Im Einkaufswagen  Stück im Wert von  UAH