SSM6P49NU,LF
Produktcode: 177120
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SSM6P49NU,LF nach Preis ab 0.21 EUR bis 1.13 EUR
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SSM6P49NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6UDFN Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P49NU,LF | Hersteller : Toshiba |
MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P49NU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6UDFN Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 10462 Stücke: Lieferzeit 10-14 Tag (e) |
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