SSM6P49NU,LF

SSM6P49NU,LF Toshiba Semiconductor and Storage


SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
Produktrezensionen
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Technische Details SSM6P49NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 20V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-UDFN (2x2).

Weitere Produktangebote SSM6P49NU,LF nach Preis ab 0.31 EUR bis 1.04 EUR

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SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba SSM6P49NU_datasheet_en_20210917-1150963.pdf MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
auf Bestellung 4253 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
60+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.4 EUR
3000+ 0.31 EUR
Mindestbestellmenge: 52
SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 5520 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
SSM6P49NU,LF
Produktcode: 177120
SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba ssm6p49nu_datasheet_en_20210917.pdf Trans MOSFET P-CH Si 20V 4A 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar