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SSM6P49NU,LF

SSM6P49NU,LF Toshiba Semiconductor and Storage

SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6P49NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 20V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-UDFN (2x2).

Weitere Produktangebote SSM6P49NU,LF nach Preis ab 0.22 EUR bis 1.13 EUR

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SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba SSM6P49NU_datasheet_en_20240930-1150963.pdf MOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS
auf Bestellung 5623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.56 EUR
100+0.38 EUR
500+0.3 EUR
1000+0.27 EUR
3000+0.23 EUR
6000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Description: MOSFET 2P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
auf Bestellung 10462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P49NU,LF
Produktcode: 177120
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SSM6P49NU_datasheet_en_20210917.pdf?did=6578&prodName=SSM6P49NU Transistoren > Transistoren P-Kanal-Feld
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SSM6P49NU,LF SSM6P49NU,LF Hersteller : Toshiba ssm6p49nu_datasheet_en_20210917.pdf Trans MOSFET P-CH Si 20V 4A 6-Pin UDFN EP T/R
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