SSM6P69NU,LF

SSM6P69NU,LF Toshiba Semiconductor and Storage


docget.jsp?did=61140&prodName=SSM6P69NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6P69NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 20V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-µDFN (2x2).

Weitere Produktangebote SSM6P69NU,LF nach Preis ab 0.22 EUR bis 1.14 EUR

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SSM6P69NU,LF SSM6P69NU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=61140&prodName=SSM6P69NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 9042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
27+0.66 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SSM6P69NU,LF SSM6P69NU,LF Hersteller : Toshiba SSM6P69NU_datasheet_en_20180327-1916572.pdf MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+6/-12V, ID=-4.0A, in UDFN6 package
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.14 EUR
10+0.70 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
3000+0.26 EUR
6000+0.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH