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SSM6P69NU,LF

SSM6P69NU,LF Toshiba Semiconductor and Storage

SSM6P69NU_datasheet_en_20180327.pdf?did=61140&prodName=SSM6P69NU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6P69NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2P-CH 20V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-µDFN (2x2).

Weitere Produktangebote SSM6P69NU,LF nach Preis ab 0.2 EUR bis 0.7 EUR

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SSM6P69NU,LF SSM6P69NU,LF Hersteller : Toshiba SSM6P69NU_datasheet_en_20180327-1916572.pdf MOSFET Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+6/-12V, ID=-4.0A, in UDFN6 package
auf Bestellung 5754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.69 EUR
10+ 0.58 EUR
100+ 0.4 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 5
SSM6P69NU,LF SSM6P69NU,LF Hersteller : Toshiba Semiconductor and Storage SSM6P69NU_datasheet_en_20180327.pdf?did=61140&prodName=SSM6P69NU Description: MOSFET 2P-CH 20V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
auf Bestellung 12033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
30+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25