STB100N10F7 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.66 EUR |
| 2000+ | 1.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB100N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 80A D2PAK, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V.
Weitere Produktangebote STB100N10F7 nach Preis ab 2.07 EUR bis 5.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STB100N10F7 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 100V 80A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
STB100N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAK Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
Produkt ist nicht verfügbar |