STB100N10F7 STMicroelectronics
auf Bestellung 251 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.79 EUR |
| 10+ | 5.64 EUR |
| 100+ | 4.5 EUR |
| 500+ | 3.72 EUR |
| 1000+ | 3.17 EUR |
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Technische Details STB100N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V.
Weitere Produktangebote STB100N10F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STB100N10F7 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB100N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB100N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 320A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STB100N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
Produkt ist nicht verfügbar |
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STB100N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
Produkt ist nicht verfügbar |
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| STB100N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 320A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |