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STB100N6F7

STB100N6F7 STMicroelectronics

STB100N6F7.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.53 EUR
Mindestbestellmenge: 1000
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Technische Details STB100N6F7 STMicroelectronics

Description: MOSFET N-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V.

Weitere Produktangebote STB100N6F7 nach Preis ab 1.72 EUR bis 8.93 EUR

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STB100N6F7 STB100N6F7 Hersteller : STMicroelectronics STB100N6F7.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.06 EUR
10+ 2.55 EUR
100+ 2.03 EUR
500+ 1.72 EUR
Mindestbestellmenge: 6
STB100N6F7 STB100N6F7 Hersteller : STMicroelectronics stb100n6f7-1850244.pdf MOSFET N-channel 60 V, 4.7 mOhm typ 100 A STripFET F7 Power MOSFET
auf Bestellung 1778 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.45 EUR
14+ 3.72 EUR
100+ 2.94 EUR
500+ 2.51 EUR
1000+ 2.12 EUR
2000+ 2.01 EUR
5000+ 1.94 EUR
Mindestbestellmenge: 12
STB100N6F7 Hersteller : STM STB100N6F7.pdf Транзистор польовий потужний MOSFET, N-Ch, D2PAK (TO-263-3); 60 В; 100 A; 0.0056 Ohm; Pd=125W
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+8.93 EUR
10+ 7.44 EUR
STB100N6F7 STB100N6F7 Hersteller : STMicroelectronics dm0014886.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB100N6F7 Hersteller : STMicroelectronics dm0014886.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar