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STB10N60M2

STB10N60M2 STMicroelectronics

stp10n60m2.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.37 EUR
100+1.80 EUR
500+1.47 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STB10N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 7.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V.

Weitere Produktangebote STB10N60M2 nach Preis ab 1.32 EUR bis 3.54 EUR

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STB10N60M2 STB10N60M2 Hersteller : STMicroelectronics stb10n60m2-1850076.pdf MOSFETs N-Ch 600V 0.55 Ohm typ. 7.5A
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.54 EUR
10+2.55 EUR
100+1.95 EUR
500+1.58 EUR
1000+1.43 EUR
2000+1.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB10N60M2 STB10N60M2 Hersteller : STMicroelectronics stu10n60m2.pdf Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB10N60M2 STB10N60M2 Hersteller : STMicroelectronics stu10n60m2.pdf Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB10N60M2 Hersteller : STMicroelectronics stu10n60m2.pdf Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB10N60M2 STB10N60M2 Hersteller : STMicroelectronics stu10n60m2.pdf Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB10N60M2 STB10N60M2 Hersteller : STMicroelectronics stp10n60m2.pdf Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH