STB11NK50ZT4

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 0.52Ω
Power dissipation: 125W
Drain current: 6.3A
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 500V
Kind of package: reel; tape
Case: D2PAK
Kind of channel: enhancement
Version: ESD

Hersteller: STMicroelectronics
MOSFETs N-Ch 500 Volt 10 Amp Zener SuperMESH