STB11NM60T4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.9 EUR |
10+ | 5.8 EUR |
100+ | 4.69 EUR |
500+ | 4.17 EUR |
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Produktbewertung abgeben
Technische Details STB11NM60T4 STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.
Weitere Produktangebote STB11NM60T4 nach Preis ab 4.99 EUR bis 10.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STB11NM60T4 | Hersteller : STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp |
auf Bestellung 986 Stücke: Lieferzeit 14-28 Tag (e) |
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STB11NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB11NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB11NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB11NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB11NM60T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |