STB11NM80T4 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB11NM80T4 STMicroelectronics
Description: MOSFET N-CH 800V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V.
Weitere Produktangebote STB11NM80T4 nach Preis ab 6.23 EUR bis 12.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STB11NM80T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
STB11NM80T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 11A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
auf Bestellung 654 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
STB11NM80T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh |
auf Bestellung 659 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
STB11NM80T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
STB11NM80T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| STB11NM80T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||
| STB11NM80T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 44A Mounting: SMD Case: D2PAK Drain-source voltage: 800V Drain current: 8A Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
STB11NM80T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||
| STB11NM80T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 44A Mounting: SMD Case: D2PAK Drain-source voltage: 800V Drain current: 8A |
Produkt ist nicht verfügbar |