STB11NM80T4

STB11NM80T4 STMicroelectronics


371cd00003205.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+6.86 EUR
Mindestbestellmenge: 1000
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Technische Details STB11NM80T4 STMicroelectronics

Description: MOSFET N-CH 800V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V.

Weitere Produktangebote STB11NM80T4 nach Preis ab 6.87 EUR bis 18.46 EUR

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STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics 371cd00003205.pdf Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+6.87 EUR
Mindestbestellmenge: 1000
STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
auf Bestellung 879 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+18.33 EUR
10+ 15.71 EUR
100+ 13.09 EUR
500+ 11.55 EUR
Mindestbestellmenge: 2
STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics stb11nm80-1850192.pdf MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
auf Bestellung 999 Stücke:
Lieferzeit 105-119 Tag (e)
Anzahl Preis ohne MwSt
3+18.46 EUR
10+ 15.81 EUR
25+ 14.33 EUR
100+ 13.18 EUR
250+ 12.4 EUR
500+ 11.62 EUR
1000+ 10.48 EUR
Mindestbestellmenge: 3
STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics 706322785380960cd00003205.pdf Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics 371cd00003205.pdf Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB11NM80T4 Hersteller : STMicroelectronics 706322785380960cd00003205.pdf Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB11NM80T4 Hersteller : STMicroelectronics stb11nm80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11NM80T4 STB11NM80T4 Hersteller : STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
STB11NM80T4 Hersteller : STMicroelectronics stb11nm80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar