STB11NM80T4 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1000+ | 3.49 EUR |
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Technische Details STB11NM80T4 STMicroelectronics
Description: MOSFET N-CH 800V 11A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STB11NM80T4 nach Preis ab 3.5 EUR bis 12.55 EUR
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STB11NM80T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB11NM80T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB11NM80T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB11NM80T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 11A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB11NM80T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh |
auf Bestellung 1412 Stücke: Lieferzeit 10-14 Tag (e) |
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STB11NM80T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 11A D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK |
auf Bestellung 1316 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB11NM80T4 | Hersteller : STM |
MOSFET N-CH 800V 11A D2PAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| STB11NM80T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 44A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |