STB120N4F6 STMicroelectronics
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.17 EUR |
| 2000+ | 1.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB120N4F6 STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STB120N4F6 nach Preis ab 1.05 EUR bis 4.42 EUR
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STB120N4F6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 89000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 89000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120N4F6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 649 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120N4F6 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 40V 4mOhm 80A STripFET VI DeepGATE |
auf Bestellung 1334 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB120N4F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB120N4F6 | Hersteller : STMicroelectronics |
STB120N4F6 SMD N channel transistors |
Produkt ist nicht verfügbar |
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STB120N4F6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |