STB120NF10T4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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Technische Details STB120NF10T4 STMicroelectronics
Description: MOSFET N-CH 100V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V.
Weitere Produktangebote STB120NF10T4 nach Preis ab 2.45 EUR bis 10.41 EUR
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STB120NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 77A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | STMicroelectronics |
MOSFETs N-Ch 100 Volt 120Amp |
auf Bestellung 1555 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120NF10T4 | STMicroelectronics |
Description: MOSFET N-CH 100V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
auf Bestellung 8155 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB120NF10T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.33 EUR |
| 16+ | 5.55 EUR |
| 20+ | 4.47 EUR |
| 25+ | 4.03 EUR |
| 100+ | 3.47 EUR |
| 200+ | 3.25 EUR |
| STB120NF10T4 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 100 Volt 120Amp
MOSFETs N-Ch 100 Volt 120Amp
auf Bestellung 1555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.38 EUR |
| 10+ | 4.71 EUR |
| 100+ | 3.61 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.57 EUR |
| 2000+ | 2.45 EUR |
| STB120NF10T4 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Description: MOSFET N-CH 100V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
auf Bestellung 8155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.41 EUR |
| 10+ | 6.94 EUR |
| 100+ | 4.97 EUR |
| 500+ | 4.5 EUR |