STB120NF10T4 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1000+ | 2.66 EUR |
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Technische Details STB120NF10T4 STMicroelectronics
Description: MOSFET N-CH 100V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V.
Weitere Produktangebote STB120NF10T4 nach Preis ab 2.06 EUR bis 8.75 EUR
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STB120NF10T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK; ESD Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 10.5mΩ Gate-source voltage: ±20V Drain current: 77A Drain-source voltage: 100V Power dissipation: 312W Case: D2PAK Kind of channel: enhancement Version: ESD |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 100 Volt 120Amp |
auf Bestellung 1555 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
auf Bestellung 8195 Stücke: Lieferzeit 10-14 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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STB120NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |