auf Bestellung 871 Stücke:
Lieferzeit 105-119 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 10.76 EUR |
| 10+ | 9.05 EUR |
| 100+ | 7.33 EUR |
| 500+ | 6.5 EUR |
| 1000+ | 5.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB12NM50T4 STMicroelectronics
Description: MOSFET N-CH 550V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 50µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.
Weitere Produktangebote STB12NM50T4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STB12NM50-T4 | Hersteller : ST |
auf Bestellung 3574 Stücke: Lieferzeit 21-28 Tag (e) |
|||
| STB12NM50T4 | Hersteller : ST |
 |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
||
| STB12NM50T4 | Hersteller : ST |
07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| STB12NM50T4 | Hersteller : ST |
09+ SPQ 1K P |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| STB12NM50T4 | Hersteller : ST |
TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| STB12NM50T4 | Hersteller : STMicroelectronics |
|
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
STB12NM50T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
 |
STB12NM50T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
STB12NM50T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |