| Anzahl | Preis |
|---|---|
| 1+ | 8.2 EUR |
| 10+ | 5.39 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.78 EUR |
| 1000+ | 3.2 EUR |
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Technische Details STB12NM50T4 STMicroelectronics
Description: MOSFET N-CH 550V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 50µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.
Weitere Produktangebote STB12NM50T4 nach Preis ab 2.17 EUR bis 8.8 EUR
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STB12NM50T4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 550V 12A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 972 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB12NM50T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 550V; 12A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK Gate-source voltage: 30V Mounting: SMD Kind of channel: enhancement Gate charge: 39nC |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB12NM50-T4 | Hersteller : ST |
auf Bestellung 3574 Stücke: Lieferzeit 21-28 Tag (e) |
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| STB12NM50T4 | Hersteller : ST |
07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB12NM50T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STB12NM50T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK; TO263 On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC |
Produkt ist nicht verfügbar |