STB13NK60ZT4 STMicroelectronics

Description: MOSFET N-CH 600V 13A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).