STB13NK60ZT4 STMicroelectronics
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
56+ | 2.82 EUR |
57+ | 2.68 EUR |
58+ | 2.54 EUR |
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Technische Details STB13NK60ZT4 STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V.
Weitere Produktangebote STB13NK60ZT4 nach Preis ab 2.7 EUR bis 9.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 10085 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 10085 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH |
auf Bestellung 739 Stücke: Lieferzeit 14-28 Tag (e) |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |