
STB13NM60N STMicroelectronics
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 2.64 EUR |
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Technische Details STB13NM60N STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V.
Weitere Produktangebote STB13NM60N nach Preis ab 2.62 EUR bis 9.94 EUR
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STB13NM60N | Hersteller : STMicroelectronics |
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auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13NM60N | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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STB13NM60N | Hersteller : STMicroelectronics |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB13NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STB13NM60N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: MDmesh™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB13NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STB13NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STB13NM60N | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
Produkt ist nicht verfügbar |
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STB13NM60N | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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![]() |
STB13NM60N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: MDmesh™ |
Produkt ist nicht verfügbar |