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STB14NK60ZT4

STB14NK60ZT4 STMicroelectronics


en.DM00115736.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+5.49 EUR
Mindestbestellmenge: 1000
Produktrezensionen
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Technische Details STB14NK60ZT4 STMicroelectronics

Description: MOSFET N-CH 600V 13.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.

Weitere Produktangebote STB14NK60ZT4 nach Preis ab 5.2 EUR bis 10.69 EUR

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STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics en.DM00115736.pdf Description: MOSFET N-CH 600V 13.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.61 EUR
10+ 8.91 EUR
100+ 7.21 EUR
500+ 6.41 EUR
Mindestbestellmenge: 3
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics stb14nk60zt4-1850193.pdf MOSFET N-Ch 600 Volt 13.5 A Zener SuperMESH
auf Bestellung 485 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.69 EUR
10+ 9 EUR
100+ 7.28 EUR
500+ 6.45 EUR
1000+ 5.49 EUR
2000+ 5.2 EUR
Mindestbestellmenge: 5
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics 401dm00115736.pdf Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics 401dm00115736.pdf Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics 401dm00115736.pdf Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB14NK60ZT4 Hersteller : STMicroelectronics 401dm00115736.pdf Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics STB14NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 Hersteller : STMicroelectronics STB14NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar