STB14NM50N STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 500V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.82 EUR |
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Technische Details STB14NM50N STMicroelectronics
Description: MOSFET N-CH 500V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V.
Weitere Produktangebote STB14NM50N nach Preis ab 4.58 EUR bis 9.41 EUR
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STB14NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V |
auf Bestellung 1455 Stücke: Lieferzeit 21-28 Tag (e) |
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STB14NM50N | Hersteller : STMicroelectronics |
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STB14NM50N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R |
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| STB14NM50N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB14NM50N | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Pulsed drain current: 48A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB14NM50N | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Pulsed drain current: 48A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |