STB160N75F3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
auf Bestellung 934 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.75 EUR |
| 10+ | 9.87 EUR |
| 100+ | 7.99 EUR |
| 500+ | 7.1 EUR |
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Technische Details STB160N75F3 STMicroelectronics
Description: MOSFET N-CH 75V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V.
Weitere Produktangebote STB160N75F3 nach Preis ab 5.75 EUR bis 11.86 EUR
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STB160N75F3 | Hersteller : STMicroelectronics |
MOSFET 75V 3.5mOhm N-Channel |
auf Bestellung 1989 Stücke: Lieferzeit 14-28 Tag (e) |
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STB160N75F3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R |
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| STB160N75F3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R |
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| STB160N75F3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Pulsed drain current: 480A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB160N75F3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 75V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STB160N75F3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Pulsed drain current: 480A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |