Weitere Produktangebote STB18N55M5
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STB18N55M5 | Hersteller : STMicroelectronics |
 MOSFET N-Ch 550V 0.8 Ohm MDmesh M5 13A |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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STB18N55M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 16A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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STB18N55M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 550V 16A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V |
Produkt ist nicht verfügbar |