STB18N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3 EUR |
Produktrezensionen
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Technische Details STB18N60DM2 STMicroelectronics
Description: STMICROELECTRONICS - STB18N60DM2 - Leistungs-MOSFET, Mdmesh DM2, n-Kanal, 600 V, 12 A, 0.26 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 90W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.26ohm, SVHC: No SVHC (17-Dec-2015).
Weitere Produktangebote STB18N60DM2 nach Preis ab 2.86 EUR bis 6.37 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STB18N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
auf Bestellung 1785 Stücke: Lieferzeit 21-28 Tag (e) |
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STB18N60DM2 | Hersteller : STMicroelectronics | MOSFET N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET |
auf Bestellung 1994 Stücke: Lieferzeit 14-28 Tag (e) |
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STB18N60DM2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB18N60DM2 - Leistungs-MOSFET, Mdmesh DM2, n-Kanal, 600 V, 12 A, 0.26 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 90W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.26ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 1901 Stücke: Lieferzeit 14-21 Tag (e) |
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STB18N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB18N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB18N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.295Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB18N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.295Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |