STB18N60M6 STMicroelectronics
auf Bestellung 980 Stücke:
Lieferzeit 1015-1029 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 6.29 EUR |
10+ | 5.23 EUR |
100+ | 4.16 EUR |
250+ | 3.85 EUR |
500+ | 3.48 EUR |
1000+ | 2.96 EUR |
2000+ | 2.83 EUR |
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Technische Details STB18N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V.
Weitere Produktangebote STB18N60M6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STB18N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB18N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB18N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB18N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
Produkt ist nicht verfügbar |