STB20N90K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 900V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 735 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.39 EUR |
| 10+ | 13.18 EUR |
| 100+ | 10.99 EUR |
| 500+ | 9.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB20N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote STB20N90K5 nach Preis ab 10.4 EUR bis 17.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STB20N90K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 900 V, 0.21 Ohm typ 20 A MDmesh K5 Power MOSFET |
auf Bestellung 1584 Stücke: Lieferzeit 475-489 Tag (e) |
|
||||||||||||||
 |
STB20N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
STB20N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| STB20N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
STB20N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
STB20N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |