| Anzahl | Preis |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 5.6 EUR |
| 500+ | 5.46 EUR |
| 1000+ | 4.95 EUR |
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Technische Details STB20NM50FDT4 STMicroelectronics
Description: MOSFET N-CH 500V 20A D2PAK, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote STB20NM50FDT4 nach Preis ab 5.61 EUR bis 11.05 EUR
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STB20NM50FDT4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 500V 20A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) |
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STB20NM50FDT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 20A D2PAK Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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