| Anzahl | Preis |
|---|---|
| 1+ | 8.94 EUR |
| 10+ | 5.86 EUR |
| 100+ | 4.38 EUR |
| 500+ | 3.66 EUR |
| 1000+ | 3.33 EUR |
| 2000+ | 3.2 EUR |
| 5000+ | 3.17 EUR |
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Technische Details STB20NM60T4 STMicroelectronics
Description: MOSFET N-CH 600V 20A D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V.
Weitere Produktangebote STB20NM60T4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STB20NM60T4 | Hersteller : ST |
 TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STB20NM60T4 | Hersteller : STM |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STB20NM60T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 20A D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
Produkt ist nicht verfügbar |