auf Bestellung 850 Stücke:
Lieferzeit 1001-1015 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 9.65 EUR |
10+ | 8.11 EUR |
25+ | 7.64 EUR |
100+ | 6.55 EUR |
250+ | 6.19 EUR |
500+ | 5.82 EUR |
1000+ | 5.07 EUR |
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Technische Details STB20NM60T4 STMicroelectronics
Description: MOSFET N-CH 600V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.
Weitere Produktangebote STB20NM60T4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STB20NM60T4 | Hersteller : ST |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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STB20NM60T4 | Hersteller : ST | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB20NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB20NM60T4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB20NM60T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB20NM60T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
Produkt ist nicht verfügbar |