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STB21N65M5

STB21N65M5 STMicroelectronics

stp21n65m5.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.99 EUR
10+ 10.07 EUR
100+ 8.15 EUR
500+ 7.24 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details STB21N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.

Weitere Produktangebote STB21N65M5 nach Preis ab 6.32 EUR bis 12.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STB21N65M5 STB21N65M5 Hersteller : STMicroelectronics stb21n65m5-1850043.pdf MOSFET POWER MOSFET N-CH 650V
auf Bestellung 918 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.25 EUR
10+ 10.27 EUR
25+ 9.7 EUR
100+ 8.32 EUR
250+ 7.85 EUR
500+ 7.41 EUR
1000+ 6.32 EUR
Mindestbestellmenge: 5
STB21N65M5
Produktcode: 190960 		stp21n65m5.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
STB21N65M5 STB21N65M5 Hersteller : STMicroelectronics 1567493300791826cd002.pdf Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N65M5 STB21N65M5 Hersteller : STMicroelectronics 1567493300791826cd002.pdf Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N65M5 STB21N65M5 Hersteller : STMicroelectronics 1567493300791826cd002.pdf Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N65M5 Hersteller : STMicroelectronics 1567493300791826cd002.pdf Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N65M5 STB21N65M5 Hersteller : STMicroelectronics stp21n65m5.pdf Description: MOSFET N-CH 650V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar