STB21N65M5 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.12 EUR |
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Technische Details STB21N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Weitere Produktangebote STB21N65M5 nach Preis ab 3.18 EUR bis 8.06 EUR
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STB21N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N65M5 | Hersteller : STMicroelectronics |
MOSFETs POWER MOSFET N-CH 650V |
auf Bestellung 843 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
auf Bestellung 4761 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N65M5 Produktcode: 190960
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STB21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |