STB21N90K5

STB21N90K5 STMicroelectronics


en.CD00255284.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+8.71 EUR
Mindestbestellmenge: 1000
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Technische Details STB21N90K5 STMicroelectronics

Description: MOSFET N-CH 900V 18.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V.

Weitere Produktangebote STB21N90K5 nach Preis ab 8.76 EUR bis 15.47 EUR

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STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics en.CD00255284.pdf Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
auf Bestellung 1461 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.37 EUR
10+ 13.17 EUR
100+ 10.97 EUR
500+ 9.68 EUR
Mindestbestellmenge: 2
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics stb21n90k5-1850169.pdf MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
auf Bestellung 931 Stücke:
Lieferzeit 172-186 Tag (e)
Anzahl Preis ohne MwSt
4+15.47 EUR
10+ 13.29 EUR
25+ 12.92 EUR
100+ 11.05 EUR
250+ 10.89 EUR
500+ 9.78 EUR
1000+ 8.76 EUR
Mindestbestellmenge: 4
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics cd0025528.pdf Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
STB21N90K5 Hersteller : STMicroelectronics cd0025528.pdf Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics cd0025528.pdf Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics cd0025528.pdf Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics STx21N90K5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 Hersteller : STMicroelectronics STx21N90K5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Produkt ist nicht verfügbar