STB21N90K5 STMicroelectronics
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 4.74 EUR |
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Technische Details STB21N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V.
Weitere Produktangebote STB21N90K5 nach Preis ab 4.74 EUR bis 10.61 EUR
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STB21N90K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 |
auf Bestellung 609 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
auf Bestellung 1338 Stücke: Lieferzeit 10-14 Tag (e) |
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STB21N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB21N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB21N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 18.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB21N90K5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 11.6A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB21N90K5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 11.6A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |