STB23NM50N

Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 0.19Ω
Drain current: 11A
Gate-source voltage: ±25V
Power dissipation: 125W
Drain-source voltage: 500V
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STB23NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 17 A, 0.162 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 125W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.162ohm

Hersteller: STMicroelectronics
MOSFETs MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V