STB24N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.185 Ohm typ 16 A MDmesh M2 Power MOSFET in D2PAK package
| Anzahl | Preis |
|---|---|
| 1+ | 5.3 EUR |
| 10+ | 4.77 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.82 EUR |
| 1000+ | 3.2 EUR |
| 2000+ | 3.04 EUR |
| 5000+ | 2.92 EUR |
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Technische Details STB24N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 16A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STB24N65M2
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STB24N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 16A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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STB24N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 16A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |