STB24N65M2

STB24N65M2 STMicroelectronics


stb24n65m2-1850078.pdf Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.185 Ohm typ 16 A MDmesh M2 Power MOSFET in D2PAK package
auf Bestellung 27 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.83 EUR
10+ 7.05 EUR
100+ 6.19 EUR
500+ 5.64 EUR
1000+ 4.73 EUR
2000+ 4.5 EUR
5000+ 4.32 EUR
Mindestbestellmenge: 7
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Technische Details STB24N65M2 STMicroelectronics

Description: MOSFET N-CH 650V 16A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.

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STB24N65M2 STB24N65M2 Hersteller : STMicroelectronics 152dm00121015.pdf Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R
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STB24N65M2 Hersteller : STMicroelectronics 152dm00121015.pdf Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB24N65M2 STB24N65M2 Hersteller : STMicroelectronics en.DM00121015.pdf Description: MOSFET N-CH 650V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
STB24N65M2 STB24N65M2 Hersteller : STMicroelectronics en.DM00121015.pdf Description: MOSFET N-CH 650V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar