Technische Details STB25NM50N-1 ST
Description: MOSFET N-CH 500V 22A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote STB25NM50N-1
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STB25NM50N-1 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 500V 22A I2PAKInput Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
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STB25NM50N-1 | Hersteller : STMicroelectronics |
MOSFET N-CHANNEL MFT |
Produkt ist nicht verfügbar |