STB27NM60ND STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 600V 21A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 6.89 EUR |
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Technische Details STB27NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STB27NM60ND nach Preis ab 6.53 EUR bis 12.34 EUR
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STB27NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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STB27NM60ND | Hersteller : STMicroelectronics |
MOSFETs N-Ch Power Mosfet 600V STripFET D2PAK |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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STB27NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB27NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STB27NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |