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STB27NM60ND

STB27NM60ND STMicroelectronics

1400774663416673cd002.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 21A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+7.18 EUR
Mindestbestellmenge: 22
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Technische Details STB27NM60ND STMicroelectronics

Description: MOSFET N-CH 600V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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STB27NM60ND STB27NM60ND Hersteller : STMicroelectronics 1400774663416673cd002.pdf Trans MOSFET N-CH 600V 21A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+7.18 EUR
Mindestbestellmenge: 22
STB27NM60ND STB27NM60ND Hersteller : STMicroelectronics sgsts50077_1-2282383.pdf MOSFET N-Ch Power Mosfet 600V STripFET D2PAK
auf Bestellung 95 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.69 EUR
10+ 15.34 EUR
25+ 14.72 EUR
100+ 13.13 EUR
250+ 12.66 EUR
500+ 12.06 EUR
1000+ 10.22 EUR
Mindestbestellmenge: 4
STB27NM60ND STB27NM60ND Hersteller : STMicroelectronics 1400774663416673cd002.pdf Trans MOSFET N-CH 600V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB27NM60ND STB27NM60ND Hersteller : STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STB27NM60ND STB27NM60ND Hersteller : STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar