Weitere Produktangebote STB28N65M2 nach Preis ab 2.31 EUR bis 6.92 EUR
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STB28N65M2 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 20A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N65M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package |
auf Bestellung 1367 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
auf Bestellung 3309 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB28N65M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK; ESD Mounting: SMD Case: D2PAK Kind of package: reel; tape On-state resistance: 0.18Ω Drain current: 13A Gate-source voltage: ±25V Power dissipation: 170W Pulsed drain current: 80A Drain-source voltage: 650V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |