STB28NM50N

STB28NM50N STMicroelectronics


en.CD00271786.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+8.87 EUR
Mindestbestellmenge: 1000
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Technische Details STB28NM50N STMicroelectronics

Description: MOSFET N-CH 500V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V.

Weitere Produktangebote STB28NM50N nach Preis ab 8.53 EUR bis 15.76 EUR

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STB28NM50N STB28NM50N Hersteller : STMicroelectronics en.CD00271786.pdf Description: MOSFET N-CH 500V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.65 EUR
10+ 13.41 EUR
100+ 11.17 EUR
500+ 9.86 EUR
Mindestbestellmenge: 2
STB28NM50N STB28NM50N Hersteller : STMicroelectronics stb28nm50n-1850044.pdf MOSFET N-Ch 500V 0.135 21A MDmesh II
auf Bestellung 967 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.76 EUR
10+ 13.52 EUR
100+ 11.26 EUR
500+ 9.93 EUR
1000+ 8.79 EUR
2000+ 8.53 EUR
Mindestbestellmenge: 4
STB28NM50N STB28NM50N Hersteller : STMicroelectronics 400920088103406cd002.pdf Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB28NM50N Hersteller : STMicroelectronics 400920088103406cd002.pdf Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar