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STB30N65DM6AG

STB30N65DM6AG STMicroelectronics

stb30n65dm6ag-2504653.pdf Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET Automotive-grade
auf Bestellung 964 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.29 EUR
10+ 12.84 EUR
25+ 12.43 EUR
100+ 10.37 EUR
250+ 10.06 EUR
500+ 9.23 EUR
1000+ 7.88 EUR
Mindestbestellmenge: 4
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Technische Details STB30N65DM6AG STMicroelectronics

Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote STB30N65DM6AG nach Preis ab 9.15 EUR bis 15.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STB30N65DM6AG Hersteller : STMicroelectronics stb30n65dm6ag.pdf Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 999 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.18 EUR
10+ 12.73 EUR
100+ 10.3 EUR
500+ 9.15 EUR
Mindestbestellmenge: 2
STB30N65DM6AG Hersteller : STMicroelectronics stb30n65dm6ag.pdf Trans MOSFET N-CH 650V 28A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
STB30N65DM6AG Hersteller : STMicroelectronics stb30n65dm6ag.pdf Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar