STB30N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 5.03 EUR |
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Technische Details STB30N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V.
Weitere Produktangebote STB30N65M5 nach Preis ab 5.04 EUR bis 12.13 EUR
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STB30N65M5 | Hersteller : STMicroelectronics |
MOSFETs POWER MOSFET N-CH 650V |
auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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STB30N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 22A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V |
auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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STB30N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 22A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB30N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 22A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |