STB30N65M5 STMicroelectronics


en.CD00223067.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.14 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STB30N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V.

Weitere Produktangebote STB30N65M5 nach Preis ab 5.89 EUR bis 12.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STB30N65M5 STB30N65M5 STMicroelectronics en.CD00223067.pdf MOSFETs POWER MOSFET N-CH 650V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.54 EUR
10+8.46 EUR
100+6.31 EUR
500+6.28 EUR
1000+5.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB30N65M5 STB30N65M5 STMicroelectronics en.CD00223067.pdf Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.57 EUR
10+8.47 EUR
100+6.3 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STB30N65M5 en.CD00223067.pdf
Hersteller: STMicroelectronics
MOSFETs POWER MOSFET N-CH 650V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+12.54 EUR
10+8.46 EUR
100+6.31 EUR
500+6.28 EUR
1000+5.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB30N65M5 en.CD00223067.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.57 EUR
10+8.47 EUR
100+6.3 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH