STB31N65M5

STB31N65M5 STMicroelectronics


stb31n65m5-1850310.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh M5
auf Bestellung 950 Stücke:

Lieferzeit 112-126 Tag (e)
Anzahl Preis ohne MwSt
5+10.61 EUR
10+ 9.78 EUR
25+ 8.01 EUR
100+ 7.59 EUR
250+ 6.81 EUR
500+ 5.49 EUR
1000+ 5.04 EUR
Mindestbestellmenge: 5
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Technische Details STB31N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V.

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STB31N65M5 STB31N65M5 Hersteller : STMicroelectronics stw31n65m5.pdf Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R
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STB31N65M5 Hersteller : STMicroelectronics stw31n65m5.pdf Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB31N65M5 STB31N65M5 Hersteller : STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
STB31N65M5 STB31N65M5 Hersteller : STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar