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STB33N65M2

STB33N65M2 STMicroelectronics

en.DM00151754.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.44 EUR
Mindestbestellmenge: 1000
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Technische Details STB33N65M2 STMicroelectronics

Description: MOSFET N-CH 650V 24A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.

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STB33N65M2 STB33N65M2 Hersteller : STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.65 EUR
10+ 5.59 EUR
100+ 4.52 EUR
500+ 4.02 EUR
Mindestbestellmenge: 3
STB33N65M2 STB33N65M2 Hersteller : STMicroelectronics stb33n65m2-1850080.pdf MOSFET N-channel 650 V, 0.117 Ohm typ 24 A MDmesh M2 Power MOSFET in D2PAK package
auf Bestellung 5000 Stücke:
Lieferzeit 421-435 Tag (e)
Anzahl Preis ohne MwSt
6+9.88 EUR
10+ 8.32 EUR
25+ 8.09 EUR
100+ 6.73 EUR
250+ 6.53 EUR
500+ 6.01 EUR
1000+ 5.12 EUR
Mindestbestellmenge: 6
STB33N65M2 Hersteller : STMicroelectronics 715435069263439dm00151754.pdf Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
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STB33N65M2 STB33N65M2 Hersteller : STMicroelectronics 715435069263439dm00151754.pdf Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar